Hynix 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2666-sodimm-16gb-1x-dr Dramatically improve performance and handle

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (2x 8GB) DDR4 2133 MT/s 288-pin RDIMM RAM kit from Crucial

2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Pieces in Kit 1 Compatibility

M378A2K43BB1-CRC Capacity 16GB (1x 16GB) Brand Samsung Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL11 Configuration 1024M x8 Pieces in Kit 2 Compatibility

Hynix 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2666-sodimm-16gb-1x-dr Dramatically improve performance and handleProduct Overview This 4GB (1x 4GB) DDR3 1333 MT s RAM module from Hynix is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.